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SOT-23-3
Discrete Semiconductor Products

SI2319DDS-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 40V 2.7A/3.6A SOT23

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DocumentsDatasheet
SOT-23-3
Discrete Semiconductor Products

SI2319DDS-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 40V 2.7A/3.6A SOT23

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSI2319DDS-T1-GE3
Current - Continuous Drain (Id) @ 25°C3.6 A, 2.7 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs19 nC
Input Capacitance (Ciss) (Max) @ Vds650 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Rds On (Max) @ Id, Vgs75 mOhm
Supplier Device PackageSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.41
100$ 0.28
500$ 0.22
1000$ 0.18
Digi-Reel® 1$ 0.48
10$ 0.41
100$ 0.28
500$ 0.22
1000$ 0.18
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14

Description

General part information

SI2319 Series

P-Channel 40 V 2.7A (Ta), 3.6A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Documents

Technical documentation and resources