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SG6858TZ
Discrete Semiconductor Products

FDC638P

Active
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -20V, -4.5A, 48MΩ

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DocumentsDatasheetDatasheet+1
SG6858TZ
Discrete Semiconductor Products

FDC638P

Active
ON Semiconductor

P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET, 2.5V SPECIFIED, -20V, -4.5A, 48MΩ

Deep-Dive with AI

DocumentsDatasheetDatasheet+1

Technical Specifications

Parameters and characteristics for this part

SpecificationFDC638P
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]14 nC
Input Capacitance (Ciss) (Max) @ Vds1160 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs48 mOhm
Supplier Device PackageSuperSOT™-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.66
10$ 0.57
100$ 0.39
500$ 0.33
1000$ 0.28
Digi-Reel® 1$ 0.66
10$ 0.57
100$ 0.39
500$ 0.33
1000$ 0.28
Tape & Reel (TR) 3000$ 0.25
6000$ 0.24
9000$ 0.22
30000$ 0.22
NewarkEach (Supplied on Full Reel) 3000$ 0.34
6000$ 0.30
12000$ 0.27
18000$ 0.25
30000$ 0.22
ON SemiconductorN/A 1$ 0.17

Description

General part information

FDC638APZ Series

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.