Discrete Semiconductor Products

FDC638P-P

Obsolete

ON Semiconductor

MOSFET N-CH 60V SUPERSOT6

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Search across all available documentation for this part.

Discrete Semiconductor Products

FDC638P-P

Obsolete

ON Semiconductor

MOSFET N-CH 60V SUPERSOT6

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDC638P-P

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14 nC
Input Capacitance (Ciss) (Max) @ Vds	1160 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.5 V

FDC638APZ Series

P-Channel PowerTrench<sup>®</sup> MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Supplier Device Package
ON Semiconductor FDC638P	SOT-23-6 Thin TSOT-23-6	1160 pF	4.5 A	P-Channel	8 V	48 mOhm	1.5 V	20 V	2.5 V 4.5 V	14 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SuperSOT™-6
ON Semiconductor FDC638P-P	SOT-23-6 Thin TSOT-23-6	1160 pF	4.5 A	P-Channel	8 V	48 mOhm	1.5 V	20 V	2.5 V 4.5 V	14 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SuperSOT™-6
ON Semiconductor FDC638APZ	SOT-23-6 Thin TSOT-23-6	1000 pF	4.5 A	P-Channel	12 V	43 mOhm	1.5 V	20 V	2.5 V 4.5 V	12 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SuperSOT™-6

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC638APZ Series

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Documents

Technical documentation and resources

No documents available