FDC638APZ Series

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

Catalog

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Supplier Device Package
ON Semiconductor FDC638P	SOT-23-6 Thin TSOT-23-6	1160 pF	4.5 A	P-Channel	8 V	48 mOhm	1.5 V	20 V	2.5 V 4.5 V	14 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SuperSOT™-6
ON Semiconductor FDC638P-P	SOT-23-6 Thin TSOT-23-6	1160 pF	4.5 A	P-Channel	8 V	48 mOhm	1.5 V	20 V	2.5 V 4.5 V	14 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SuperSOT™-6
ON Semiconductor FDC638APZ	SOT-23-6 Thin TSOT-23-6	1000 pF	4.5 A	P-Channel	12 V	43 mOhm	1.5 V	20 V	2.5 V 4.5 V	12 nC	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	SuperSOT™-6

Catalog

P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ

Key Features

• Max rDS(ON)= 43mΩ at VGS= -4.5V, ID= -4.5A

• Max rDS(ON)= 68mΩ at VGS= -2.5V, ID= -3.8A

• Low gate charge (8nC typical).

• High performance trench technology for extremely low rDS(on)

• SuperSOT™ -6 package:small footprint (72% smaller than standard SO¨C8) low profile (1mm thick).

• RoHS Compliant

• Manufactured using Green packaging materials.

• Halide free

Description

This P-Channel 2.5V specified MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.