Discrete Semiconductor Products
STP19NF20
ActiveSTMicroelectronics
N-CHANNEL 200 V, 0.11 OHM TYP., 11 A MESH OVERLAY POWER MOSFET IN TO-220 PACKAGE
Discrete Semiconductor Products
STP19NF20
ActiveSTMicroelectronics
N-CHANNEL 200 V, 0.11 OHM TYP., 11 A MESH OVERLAY POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP19NF20 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 90 W |
| Rds On (Max) @ Id, Vgs | 160 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP19NF20 Series
These Power MOSFETs are designed using STMicroelectronics' consolidated strip-layout-based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
Documents
Technical documentation and resources