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FERD30H100SB-TR
Discrete Semiconductor Products

FERD30H100SB-TR

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STMicroelectronics

100 V, 30 A FIELD-EFFECT RECTIFIER DIODE (FERD)

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FERD30H100SB-TR
Discrete Semiconductor Products

FERD30H100SB-TR

Active
STMicroelectronics

100 V, 30 A FIELD-EFFECT RECTIFIER DIODE (FERD)

Deep-Dive with AI

Documents+5

Technical Specifications

Parameters and characteristics for this part

SpecificationFERD30H100SB-TR
Current - Average Rectified (Io)30 A
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Speed500 ns, 200 mA
Supplier Device PackageDPAK
TechnologyFERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 10519$ 1.10

Description

General part information

FERD30H100S Series

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.