FERD30H100STS
Active100 V, 30 A FIELD-EFFECT RECTIFIER DIODE (FERD)
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FERD30H100STS
Active100 V, 30 A FIELD-EFFECT RECTIFIER DIODE (FERD)
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Technical Specifications
Parameters and characteristics for this part
| Specification | FERD30H100STS |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 130 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | TO-220-3 |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-220AB |
| Technology | FERD (Field Effect Rectifier Diode) |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 745 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
FERD30H100S Series
The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. It is highly recommended to be used in adapters and chargers.
Documents
Technical documentation and resources
