Discrete Semiconductor Products

STGW30NC60VD

LTB

IGBT, 80 A, 2.1 V, 250 W, 600 V, TO-247LL, 3 PINS

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Discrete Semiconductor Products

LTB

IGBT, 80 A, 2.1 V, 250 W, 600 V, TO-247LL, 3 PINS

Technical Specifications

Parameters and characteristics for this part

Specification	STGW30NC60VD

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	100 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	250 W
Reverse Recovery Time (trr)	44 ns
Supplier Device Package	TO-247-3
Switching Energy	330 µJ, 220 µJ
Td (on/off) @ 25°C	31 ns, 100 ns
Test Condition	15 V, 3.3 Ohm, 20 A, 390 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

40 A, 600 V, fast IGBT with UltraFAST diode

Part	Package / Case	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Gate Charge	Switching Energy	Operating Temperature [Max]	Operating Temperature [Min]	Test Condition
STMicroelectronics STGW30NC60VD	TO-247-3	TO-247-3	80 A	250 W	Through Hole	2.5 V	44 ns	600 V	150 A	31 ns 100 ns	100 nC	220 µJ 330 µJ	150 °C	-55 °C	3.3 Ohm 15 V 20 A 390 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	15	$ 8.34

General part information

This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.