Catalog
40 A, 600 V, fast IGBT with UltraFAST diode
Description
AI
This device uses the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.
Beta
⌘K
40 A, 600 V, fast IGBT with UltraFAST diode
40 A, 600 V, fast IGBT with UltraFAST diode
| Part | Package / Case | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Mounting Type | Vce(on) (Max) @ Vge, Ic | Reverse Recovery Time (trr) | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Pulsed (Icm) | Td (on/off) @ 25°C | Gate Charge | Switching Energy | Operating Temperature [Max] | Operating Temperature [Min] | Test Condition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | TO-247-3 | TO-247-3 | 80 A | 250 W | Through Hole | 2.5 V | 44 ns | 600 V | 150 A | 31 ns 100 ns | 100 nC | 220 µJ 330 µJ | 150 °C | -55 °C | 3.3 Ohm 15 V 20 A 390 V |