Specification	PHPT60606PYX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	110 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-100, SOT-669
Power - Max [Max]	1.35 W
Qualification	AEC-Q100
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	525 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	60 V

PHPT60606 Series

60 V, 6 A PNP high power bipolar transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Grade	Operating Temperature	Package / Case	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Qualification	Frequency - Transition	Mounting Type
Nexperia USA Inc. PHPT60606NYX	240	Automotive	175 °C	SC-100 SOT-669	1.35 W	360 mV	NPN	LFPAK56 Power-SO8	60 V	100 nA	AEC-Q100	180 MHz	Surface Mount
Nexperia USA Inc. PHPT60606PYX	120	Automotive	175 °C	SC-100 SOT-669	1.35 W	525 mV	PNP	LFPAK56 Power-SO8	60 V	100 nA	AEC-Q100	110 MHz	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.

Technical documentation and resources