Discrete Semiconductor Products

PHPT60606NYX

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TRANS NPN 60V 6A LFPAK56 PWRSO8

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Discrete Semiconductor Products

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TRANS NPN 60V 6A LFPAK56 PWRSO8

Technical Specifications

Parameters and characteristics for this part

Specification	PHPT60606NYX

Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	240
Frequency - Transition	180 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-669, SC-100
Power - Max [Max]	1.35 W
Qualification	AEC-Q100
Supplier Device Package	Power-SO8, LFPAK56
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	360 mV
Voltage - Collector Emitter Breakdown (Max)	60 V

Part	Grade	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Transistor Type	Package / Case	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Qualification	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Mounting Type
Freescale Semiconductor - NXP PHPT60606NYX	Automotive	240	175 °C	NPN	SC-100 SOT-669	180 MHz	100 nA	LFPAK56 Power-SO8	360 mV	AEC-Q100	1.35 W	60 V	Surface Mount
Freescale Semiconductor - NXP PHPT60606PYX	Automotive	120 hFE	175 °C	PNP	SC-100 SOT-669	110 MHz	100 nA	LFPAK56 Power-SO8	525 mV	AEC-Q100	1.35 W	60 V	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 60 V 6 A 180MHz 1.35 W Surface Mount LFPAK56, Power-SO8

Technical documentation and resources