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SOT669
Discrete Semiconductor Products

PHPT60606NYX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 6 A PNP HIGH POWER BIPOLAR TRANSISTOR

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Search across all available documentation for this part.

DocumentsQuestions about package outline drawingsReflow soldering profile+8
SOT669
Discrete Semiconductor Products

PHPT60606NYX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 6 A PNP HIGH POWER BIPOLAR TRANSISTOR

Deep-Dive with AI

DocumentsQuestions about package outline drawingsReflow soldering profile+8

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT60606NYX
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]240
Frequency - Transition180 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-100, SOT-669
Power - Max [Max]1.35 W
QualificationAEC-Q100
Supplier Device PackagePower-SO8, LFPAK56
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic360 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
Digi-Reel® 1$ 0.64
10$ 0.55
100$ 0.38
500$ 0.30
N/A 2445$ 1.19
Tape & Reel (TR) 1500$ 0.24
3000$ 0.22
7500$ 0.20
10500$ 0.19
37500$ 0.19
MouserN/A 1$ 0.85
10$ 0.58
100$ 0.39
500$ 0.30
1000$ 0.27
1500$ 0.24
3000$ 0.22
9000$ 0.20

Description

General part information

PHPT60606 Series

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.