Catalog
60 V, 6 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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60 V, 6 A PNP high power bipolar transistor
60 V, 6 A PNP high power bipolar transistor
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Grade | Operating Temperature | Package / Case | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Qualification | Frequency - Transition | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 240 | Automotive | 175 °C | SC-100 SOT-669 | 1.35 W | 360 mV | NPN | LFPAK56 Power-SO8 | 60 V | 100 nA | AEC-Q100 | 180 MHz | Surface Mount |
 Nexperia USA Inc. | 120 | Automotive | 175 °C | SC-100 SOT-669 | 1.35 W | 525 mV | PNP | LFPAK56 Power-SO8 | 60 V | 100 nA | AEC-Q100 | 110 MHz | Surface Mount |