Discrete Semiconductor Products
STD1HN60K3
ActiveSTMicroelectronics
N-CHANNEL 600 V, 6.4 OHM TYP., 1.2 A, SUPERMESH3(TM) POWER MOSFET IN DPAK PACKAGE
Discrete Semiconductor Products
STD1HN60K3
ActiveSTMicroelectronics
N-CHANNEL 600 V, 6.4 OHM TYP., 1.2 A, SUPERMESH3(TM) POWER MOSFET IN DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD1HN60K3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1.2 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 27 W |
| Rds On (Max) @ Id, Vgs | 8 Ohm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD1HN60K3 Series
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Documents
Technical documentation and resources