Specification	APL602J

Current - Continuous Drain (Id) @ 25¯C	43 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	12 V, 12 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	565 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	ISOTOPÛ
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-30 V
Vgs(th) (Max) @ Id	4 V

MOSFET-LINEAR-600V Series

600V Linear MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Current - Continuous Drain (Id) @ 25¯C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Microchip Technology APL602J	9000 pF	-30 V	43 A	4 V	125 mOhm	ISOTOPÛ	565 W	12 V 12 V	600 V	SOT-227-4 miniBLOC	MOSFET (Metal Oxide)	Chassis Mount	-55 °C	150 °C	N-Channel
Microchip Technology APL602LG-1	9000 pF			4 V	125 mOhm	TO-264 (L)		12 V 12 V	600 V	TO-264-3 TO-264AA	MOSFET (Metal Oxide)	Through Hole	-55 °C	150 °C	N-Channel	730 W	49 A	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

What is a Linear MOSFET?

A MOSFET specifically designed to be more robust than a standard MOSFET when

operated with both high voltage and high current near DC conditions (>100

Technical documentation and resources