Beta

⌘K

Product dimension image

Discrete Semiconductor Products

SCS220KE2GC11

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 20 A, 34 NC, TO-247

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsHow to Use LTspice® Models: Tips for Improving Convergence Judgment Criteria of Thermal Evaluation +32

Product dimension image

Discrete Semiconductor Products

SCS220KE2GC11

Active

Rohm Semiconductor

SILICON CARBIDE SCHOTTKY DIODE, DUAL COMMON CATHODE, 1.2 KV, 20 A, 34 NC, TO-247

Deep-Dive with AI

DocumentsHow to Use LTspice® Models: Tips for Improving Convergence Judgment Criteria of Thermal Evaluation +32

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCS220KE2GC11

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247N
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 15.69
		30	$ 9.64
		120	$ 8.31
		510	$ 8.20
Newark	Each	1	$ 15.26
		10	$ 14.30
		25	$ 9.97
		50	$ 9.29
		100	$ 8.60
		250	$ 8.57
		500	$ 8.53

Description

General part information

SCS220AE2HR Series

Switching loss reduced, enabling high-speed switching . (3-pin package)

Documents

Technical documentation and resources

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

ESD Data

Characteristics Data

Package Dimensions

Package Information

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

About Flammability of Materials

Environmental Data

About Export Administration Regulations (EAR)

Export Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Taping Information

Package Information

SCS220KE2 Data Sheet

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Two-Resistor Model for Thermal Simulation

Diode Types and Applications

Technical Article

Compliance of the ELV directive

Environmental Data

4 Steps for Successful Thermal Designing of Power Devices

Explanation for Marking - TO-247N SiC_Marking-e.pdf

Package Information

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Anti-Whisker formation

Package Information

Precautions for Thermal Resistance of Insulation Sheet

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

θ<sub>JA</sub> and Ψ<sub>JT</sub>

What Is Thermal Design

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Reliability Test Result

Manufacturing Data

Measurement Method and Usage of Thermal Resistance RthJC

How to Use the Thermal Resistance and Thermal Characteristics Parameters

PCB Layout Thermal Design Guide

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Inner Structure

Package Information

How to Create Symbols for PSpice Models

Notes for Temperature Measurement Using Thermocouples

How to measure the oscillation occurs between parallel-connected devices

Technical Article

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

SCS220AE2HR Series

1200V, 20A, 3-pin THD, Silicon-carbide (SiC) SBD for Automotive

Part	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Speed	Operating Temperature - Junction	Capacitance @ Vr, F	Qualification	Grade
Rohm Semiconductor SCS220AE2C	1 Pair Common Cathode	1.55 V	175 °C	10 A	200 µA	TO-247	SiC (Silicon Carbide) Schottky	0 ns	650 V	Through Hole	TO-247-3	No Recovery Time
Rohm Semiconductor SCS220KE2HRC11	1 Pair Common Cathode	1.6 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	0 ns	1.2 kV	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220AE2GC11	1 Pair Common Cathode	1.55 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	0 ns	650 V	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220AGHRC		1.55 V	175 °C		400 µA	TO-220AC	SiC (Silicon Carbide) Schottky	0 ns	650 V	Through Hole	TO-220-2	No Recovery Time		730 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AE2HRC11	1 Pair Common Cathode	1.55 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	0 ns	650 V	Through Hole	TO-247-3	No Recovery Time	175 °C
Rohm Semiconductor SCS220KGHRC		1.6 V	175 °C		400 µA	TO-220AC	SiC (Silicon Carbide) Schottky	0 ns	1.2 kV	Through Hole	TO-220-2	No Recovery Time		1060 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AJHRTLL		1.55 V	175 °C		400 µA		SiC (Silicon Carbide) Schottky	0 ns	650 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	No Recovery Time		730 pF	AEC-Q101	Automotive
Rohm Semiconductor SCS220AMC		1.55 V	175 °C		400 µA	TO-220FM	SiC (Silicon Carbide) Schottky	0 ns	650 V	Through Hole	TO-220-2 Full Pack	No Recovery Time		730 pF
Rohm Semiconductor SCS220KE2GC11	1 Pair Common Cathode	1.6 V		10 A	200 µA	TO-247N	SiC (Silicon Carbide) Schottky	0 ns	1.2 kV	Through Hole	TO-247-3	No Recovery Time	175 °C