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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N1131 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 10 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Mounting Type | Through Hole |
| Package / Case | TO-39-3 Metal Can, TO-205AD |
| Power - Max [Max] | 600 mW |
| Supplier Device Package | TO-39 (TO-205AD) |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 1.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 40 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 23.06 | |
| Microchip Direct | N/A | 1 | $ 24.82 | |
| Newark | Each | 100 | $ 23.06 | |
| 100 | $ 23.06 | |||
| 500 | $ 22.16 | |||
| 500 | $ 22.16 | |||
Description
General part information
2N1131-Transistor Series
This specification covers the performance requirements for PNP silicon low-power, 2N1131, 2N1131L, 2N1132 and 2N1132L transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/177. 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).
Documents
Technical documentation and resources
No documents available