2N1131-Transistor Series

MIL-PRF-19500/177

Catalog

MIL-PRF-19500/177

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case
Microchip Technology 2N1131	1.3 V	600 mA	Through Hole	600 mW	40 V	10 mA	PNP	TO-39 (TO-205AD)	20	TO-205AD TO-39-3 Metal Can

Catalog

MIL-PRF-19500/177

Key Features

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Description

This specification covers the performance requirements for PNP silicon low-power, 2N1131, 2N1131L, 2N1132 and 2N1132L transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/177. 2N1131 and 2N1132 (TO-39), 2N1131L and 2N1132L (TO-5).