Discrete Semiconductor Products
STS8DN3LLH5
ActiveSTMicroelectronics
DUAL N-CHANNEL 30 V, 0.0155 OHM TYP., 10 A STRIPFET(TM) V POWER MOSFET IN A SO-8 PACKAGE
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
STS8DN3LLH5
ActiveSTMicroelectronics
DUAL N-CHANNEL 30 V, 0.0155 OHM TYP., 10 A STRIPFET(TM) V POWER MOSFET IN A SO-8 PACKAGE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STS8DN3LLH5 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 5.4 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 724 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power - Max [Max] | 2.7 W |
| Rds On (Max) @ Id, Vgs | 19 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STS8DN3LLH5 Series
This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Documents
Technical documentation and resources