STS8DN3LLH5 Series

Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package

Catalog

Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package

Part	Power - Max [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	FET Feature	Technology	Package / Case	Package / Case	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Configuration	Supplier Device Package
STMicroelectronics STS8DN3LLH5	2.7 W	1 V	30 V	150 °C	-55 °C	19 mOhm	Logic Level Gate	MOSFET (Metal Oxide)	0.154 in	8-SOIC	3.9 mm	Surface Mount	10 A	724 pF	5.4 nC	2 N-Channel (Dual)	8-SOIC

Catalog

Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package

Description

This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.