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TO-220-3
Discrete Semiconductor Products

CSD18536KCS

Active
Texas Instruments

60V 200A 1.6MΩ@10V,100A 375W 2.2V 1 N-CHANNEL TO-220AB-3 MOSFETS ROHS

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TO-220-3
Discrete Semiconductor Products

CSD18536KCS

Active
Texas Instruments

60V 200A 1.6MΩ@10V,100A 375W 2.2V 1 N-CHANNEL TO-220AB-3 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD18536KCS
Current - Continuous Drain (Id) @ 25°C200 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs108 nC
Input Capacitance (Ciss) (Max) @ Vds11430 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]375 W
Rds On (Max) @ Id, Vgs [Max]1.6 mOhm
Supplier Device PackageTO-220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id [Max]2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.21
50$ 3.33
100$ 2.86
500$ 2.54
1000$ 2.17
2000$ 2.05
5000$ 1.96
LCSCPiece 1$ 5.72
10$ 5.60
30$ 5.53
100$ 5.45
Texas InstrumentsTUBE 1$ 3.14
100$ 2.75
250$ 1.93
1000$ 1.55

Description

General part information

CSD18536KCS Series

This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.