
Discrete Semiconductor Products
CSD18536KCS
ActiveTexas Instruments
60V 200A 1.6MΩ@10V,100A 375W 2.2V 1 N-CHANNEL TO-220AB-3 MOSFETS ROHS
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Discrete Semiconductor Products
CSD18536KCS
ActiveTexas Instruments
60V 200A 1.6MΩ@10V,100A 375W 2.2V 1 N-CHANNEL TO-220AB-3 MOSFETS ROHS
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD18536KCS |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 11430 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 375 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.6 mOhm |
| Supplier Device Package | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.21 | |
| 50 | $ 3.33 | |||
| 100 | $ 2.86 | |||
| 500 | $ 2.54 | |||
| 1000 | $ 2.17 | |||
| 2000 | $ 2.05 | |||
| 5000 | $ 1.96 | |||
| LCSC | Piece | 1 | $ 5.72 | |
| 10 | $ 5.60 | |||
| 30 | $ 5.53 | |||
| 100 | $ 5.45 | |||
| Texas Instruments | TUBE | 1 | $ 3.14 | |
| 100 | $ 2.75 | |||
| 250 | $ 1.93 | |||
| 1000 | $ 1.55 | |||
Description
General part information
CSD18536KCS Series
This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources