Specification	CSD18536KTTT

Current - Continuous Drain (Id) @ 25°C	200 A, 349 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	140 nC
Input Capacitance (Ciss) (Max) @ Vds	11430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263AA, D2PAK (3 Leads + Tab), TO-263-4
Power Dissipation (Max) [Max]	375 W
Rds On (Max) @ Id, Vgs [Max]	1.6 mOhm
Supplier Device Package	TO-263 (DDPAK-3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.2 V

CSD18536KCS Series

60-V, N channel NexFET™ power MOSFET, single TO-220, 1.6 mOhm

Part	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Mounting Type	FET Type	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs
Texas Instruments CSD18536KTT	4.5 V 10 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	60 V	375 W	TO-263 (DDPAK-3)	20 V	-55 °C	175 ░C	11430 pF	2.2 V	Surface Mount	N-Channel	1.6 mOhm	140 nC	MOSFET (Metal Oxide)	200 A
Texas Instruments CSD18536KCS	4.5 V 10 V	TO-220-3	60 V	375 W	TO-220-3	20 V	-55 °C	175 ░C	11430 pF	2.2 V	Through Hole	N-Channel	1.6 mOhm		MOSFET (Metal Oxide)	200 A	108 nC
Texas Instruments CSD18536KTTT	4.5 V 10 V	D2PAK (3 Leads + Tab) TO-263-4 TO-263AA	60 V	375 W	TO-263 (DDPAK-3)	20 V	-55 °C	175 ░C	11430 pF	2.2 V	Surface Mount	N-Channel	1.6 mOhm	140 nC	MOSFET (Metal Oxide)	200 A 349 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Technical documentation and resources