
Discrete Semiconductor Products
CSD18536KTT
ActiveTexas Instruments
60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 1.6 MOHM
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Discrete Semiconductor Products
CSD18536KTT
ActiveTexas Instruments
60-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE D2PAK, 1.6 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD18536KTT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 140 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 11430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263AA, D2PAK (3 Leads + Tab), TO-263-4 |
| Power Dissipation (Max) [Max] | 375 W |
| Rds On (Max) @ Id, Vgs [Max] | 1.6 mOhm |
| Supplier Device Package | TO-263 (DDPAK-3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 4.41 | |
| 10 | $ 3.71 | |||
| 100 | $ 3.00 | |||
| Digi-Reel® | 1 | $ 4.41 | ||
| 10 | $ 3.71 | |||
| 100 | $ 3.00 | |||
| Tape & Reel (TR) | 500 | $ 2.66 | ||
| 1000 | $ 2.28 | |||
| 2500 | $ 2.15 | |||
| Texas Instruments | LARGE T&R | 1 | $ 3.22 | |
| 100 | $ 2.82 | |||
| 250 | $ 1.98 | |||
| 1000 | $ 1.59 | |||
Description
General part information
CSD18536KCS Series
This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 60-V, 1.3-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources