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Discrete Semiconductor Products

NXH50M65L4Q1PTG

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ON Semiconductor

IGBT MODULE, H6.5 TOPOLOGY, 650 V, 50 A IGBT, 650 V, 50 A DIODE

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Discrete Semiconductor Products

NXH50M65L4Q1PTG

Active
ON Semiconductor

IGBT MODULE, H6.5 TOPOLOGY, 650 V, 50 A IGBT, 650 V, 50 A DIODE

Technical Specifications

Parameters and characteristics for this part

SpecificationNXH50M65L4Q1PTG
ConfigurationFull Bridge
Current - Collector Cutoff (Max) [Max]300 µA
IGBT TypeTrench Field Stop
InputStandard
Input Capacitance (Cies) @ Vce3.137 nF
Mounting TypeChassis Mount
NTC ThermistorTrue
Operating Temperature175 °C
Package / CaseModule
Power - Max [Max]86 W
Supplier Device Package53-PIM/Q2PACK
Supplier Device Package [x]93
Supplier Device Package [y]47
Vce(on) (Max) @ Vge, Ic2.22 V
Voltage - Collector Emitter Breakdown (Max)650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 21$ 114.50
ON SemiconductorN/A 1$ 45.24

Description

General part information

NXH50M65L4Q1 Series

The NXH50M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 50 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.