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Discrete Semiconductor Products
NXH50M65L4Q1PTG
ActiveON Semiconductor
IGBT MODULE, H6.5 TOPOLOGY, 650 V, 50 A IGBT, 650 V, 50 A DIODE
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Discrete Semiconductor Products
NXH50M65L4Q1PTG
ActiveON Semiconductor
IGBT MODULE, H6.5 TOPOLOGY, 650 V, 50 A IGBT, 650 V, 50 A DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NXH50M65L4Q1PTG |
|---|---|
| Configuration | Full Bridge |
| Current - Collector Cutoff (Max) [Max] | 300 µA |
| IGBT Type | Trench Field Stop |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 3.137 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | True |
| Operating Temperature | 175 °C |
| Package / Case | Module |
| Power - Max [Max] | 86 W |
| Supplier Device Package | 53-PIM/Q2PACK |
| Supplier Device Package [x] | 93 |
| Supplier Device Package [y] | 47 |
| Vce(on) (Max) @ Vge, Ic | 2.22 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 21 | $ 114.50 | |
| ON Semiconductor | N/A | 1 | $ 45.24 | |
Description
General part information
NXH50M65L4Q1 Series
The NXH50M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 50 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.
Documents
Technical documentation and resources