Specification	NXH50M65L4Q1SG

Configuration	Full Bridge
Current - Collector Cutoff (Max) [Max]	300 µA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	3.137 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature	175 °C
Package / Case	Module
Power - Max [Max]	86 W
Supplier Device Package	56-PIM
Supplier Device Package [x]	93
Supplier Device Package [y]	47
Vce(on) (Max) @ Vge, Ic	2.22 V
Voltage - Collector Emitter Breakdown (Max)	650 V

NXH50M65L4Q1 Series

IGBT Module, H6.5 Topology, 650 V, 50 A IGBT, 650 V, 50 A Diode

Part	Input	Input Capacitance (Cies) @ Vce	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	NTC Thermistor	Voltage - Collector Emitter Breakdown (Max)	Package / Case	Current - Collector Cutoff (Max) [Max]	Configuration	Mounting Type	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	IGBT Type	Operating Temperature
ON Semiconductor NXH50M65L4Q1PTG	Standard	3.137 nF	86 W	2.22 V		650 V	Module	300 µA	Full Bridge	Chassis Mount	47	53-PIM/Q2PACK	93	Trench Field Stop	175 °C
ON Semiconductor NXH50M65L4Q1SG	Standard	3.137 nF	86 W	2.22 V		650 V	Module	300 µA	Full Bridge	Chassis Mount	47	56-PIM	93	Trench Field Stop	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 62.61
		21	$ 56.92
		42	$ 55.02
		84	$ 51.23
Newark	Each	10	$ 53.73
		25	$ 52.98
		50	$ 52.22
		100	$ 49.22
ON Semiconductor	N/A	1	$ 43.74

Description

General part information

NXH50M65L4Q1 Series

The NXH50M65L4Q1 is an IGBT module with H6.5 topology in a Q1 package. The module contains six 50 A, 650 V IGBTs, five 50 A, 650V Stealth diodes and a thermistor.