STP11NM60
NRNDN-CHANNEL 600 V, 0.4 OHM TYP., 11 A MDMESH II POWER MOSFET IN A TO-220 PACKAGE
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STP11NM60
NRNDN-CHANNEL 600 V, 0.4 OHM TYP., 11 A MDMESH II POWER MOSFET IN A TO-220 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STP11NM60 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 11 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1000 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-220-3 |
| Rds On (Max) @ Id, Vgs | 450 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STP11NM60 Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Documents
Technical documentation and resources