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3-HUSON
Discrete Semiconductor Products

PBSS4330PASX

Active
Nexperia USA Inc.

30 V, 3 A NPN LOW VCESAT TRANSISTOR

3-HUSON
Discrete Semiconductor Products

PBSS4330PASX

Active
Nexperia USA Inc.

30 V, 3 A NPN LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4330PASX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]270
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case3-UDFN Exposed Pad
Power - Max [Max]0.6 W
Supplier Device PackageDFN2020D-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.46
Digi-Reel® 1$ 0.74
N/A 0$ 0.22
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
15000$ 0.14
21000$ 0.13
30000$ 0.13

Description

General part information

PBSS4330 Series

NPN low VCEsattransistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.