Discrete Semiconductor Products

PBSS4330PA,115

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TRANS NPN 30V 3A 3HUSON

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Discrete Semiconductor Products

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TRANS NPN 30V 3A 3HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS4330PA,115

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	270
Frequency - Transition	210 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	2.1 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Frequency - Transition	Qualification	Package / Case	Grade	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package
Freescale Semiconductor - NXP PBSS4330X,115	100 nA	Surface Mount	270	300 mV	3 A	1.6 W	150 °C	100 MHz	AEC-Q100	TO-243AA	Automotive	NPN	30 V
Freescale Semiconductor - NXP PBSS4330PASX	100 nA	Surface Mount	270	300 mV	3 A	600 mW	175 °C			3-UDFN Exposed Pad		NPN	30 V	DFN2020D-3
Freescale Semiconductor - NXP PBSS4330X,135	100 nA	Surface Mount	270	300 mV	3 A	1.6 W	150 °C	100 MHz	AEC-Q100	TO-243AA	Automotive	NPN	30 V
Freescale Semiconductor - NXP PBSS4330PA,115	100 nA	Surface Mount	270	300 mV	3 A	2.1 W	150 °C	210 MHz		3-PowerUDFN		NPN	30 V

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General part information

Bipolar (BJT) Transistor NPN 30 V 3 A 210MHz 2.1 W Surface Mount 3-HUSON (2x2)

Technical documentation and resources