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SOT-89
Discrete Semiconductor Products

PBSS4330X,115

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Nexperia USA Inc.

30 V, 3 A NPN LOW VCESAT (BISS) TRANSISTOR

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SOT-89
Discrete Semiconductor Products

PBSS4330X,115

Active
Nexperia USA Inc.

30 V, 3 A NPN LOW VCESAT (BISS) TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4330X,115
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]270
Frequency - Transition100 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-243AA
Power - Max [Max]1.6 W
QualificationAEC-Q100
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.11
Digi-Reel® 1$ 0.34
10$ 0.24
100$ 0.12
500$ 0.11
N/A 426$ 0.62
Tape & Reel (TR) 1000$ 0.08
2000$ 0.08
5000$ 0.07

Description

General part information

PBSS4330 Series

NPN low VCEsattransistor encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and soldarable side pads.