SCT30N120
LTBSILICON CARBIDE POWER MOSFET 1200 V, 45 A, 90 MOHM (TYP. TJ = 150 C) IN AN HIP247 PACKAGE
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SCT30N120
LTBSILICON CARBIDE POWER MOSFET 1200 V, 45 A, 90 MOHM (TYP. TJ = 150 C) IN AN HIP247 PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | SCT30N120 |
|---|---|
| Drain to Source Voltage (Vdss) | 1.2 kV |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 105 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 200 °C |
| Operating Temperature [Min] | -55 ░C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 270 W |
| Rds On (Max) @ Id, Vgs | 100 mOhm |
| Supplier Device Package | HiP247™ |
| Vgs (Max) [Max] | 25 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 260 | $ 19.90 | |
Description
General part information
SCT30N120 Series
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Documents
Technical documentation and resources