SCT30N120 Series

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

Catalog

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Package / Case	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Vgs (Max) [Max]	Vgs (Max) [Min]	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)
STMicroelectronics SCT30N120	105 nC	N-Channel	TO-247-3	270 W	HiP247™	100 mOhm	1700 pF	Through Hole	25 V	-10 V	2.6 V	200 °C	-55 ░C	1.2 kV

Catalog

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247™ package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.