Specification	KSP2907ABU

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

KSP2907A Series

PNP Epitaxial Silicon Transistor

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Mounting Type
ON Semiconductor KSP2907ABU	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATF	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ABU	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ACTA	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATF	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATA	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

Technical documentation and resources