KSP2907A Series

PNP Epitaxial Silicon Transistor

Catalog

PNP Epitaxial Silicon Transistor

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Mounting Type
ON Semiconductor KSP2907ABU	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATF	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ABU	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ACTA	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATF	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATA	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole

PNP Epitaxial Silicon Transistor

• Collector-Emitter Voltage : VCEO= 60V

• Collector Power Dissipation: PC(max) = 625mW

• Suffix "-C" means Center Collector (1.Emitter 2.Collector 3.Base)

• NonSuffix "-C" means Side Collector (1.Emitter 2.Base 3.Collector)

• Available as PN2907A