Specification	KSP2907ACTA

Current - Collector (Ic) (Max) [Max]	600 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	200 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max)	60 V

KSP2907A Series

PNP Epitaxial Silicon Transistor

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Mounting Type
ON Semiconductor KSP2907ABU	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATF	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ABU	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ACTA	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATF	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole
ON Semiconductor KSP2907ATA	TO-226-3 TO-92-3	1.6 V	625 mW	TO-92-3	60 V	200 MHz	PNP	600 mA	100	0.01 µA	150 °C	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP Epitaxial Silicon Transistor

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