LMG3422R030RQZR
Active600-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING
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LMG3422R030RQZR
Active600-V 30-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING
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Technical Specifications
Parameters and characteristics for this part
| Specification | LMG3422R030RQZR |
|---|---|
| Current - Output (Max) [Max] | 40 A |
| Fault Protection | Over Temperature, UVLO, Current Limiting (Fixed) |
| Features | Slew Rate Controlled, Status Flag |
| Input Type | Non-Inverting |
| Interface | PWM |
| Mounting Type | Surface Mount |
| Number of Outputs | 1 |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -40 °C |
| Output Configuration | Low Side |
| Output Type | N/P-Channel |
| Package / Case | 54-VQFN Exposed Pad |
| Ratio - Input:Output [custom] | 1:1 |
| Rds On (Typ) | 26 mOhm |
| Supplier Device Package | 54-VQFN (12x12) |
| Switch Type | General Purpose |
| Voltage - Load | 600 V |
| Voltage - Supply (Vcc/Vdd) [Max] | 18 V |
| Voltage - Supply (Vcc/Vdd) [Min] | 7.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 2000 | $ 11.88 | |
| Texas Instruments | LARGE T&R | 1 | $ 14.89 | |
| 100 | $ 13.01 | |||
| 250 | $ 10.03 | |||
| 1000 | $ 8.97 | |||
Description
General part information
LMG3422R030 Series
The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.
Documents
Technical documentation and resources
