LMG3422R030 Series

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Catalog

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Part	Package / Case	Output Configuration	Interface	Current - Output (Max) [Max]	Voltage - Load	Rds On (Typ)	Ratio - Input:Output [custom]	Input Type	Switch Type	Operating Temperature [Max]	Operating Temperature [Min]	Fault Protection	Number of Outputs	Voltage - Supply (Vcc/Vdd) [Min]	Voltage - Supply (Vcc/Vdd) [Max]	Features	Output Type	Supplier Device Package	Mounting Type	Contents	Type	Utilized IC / Part	Function
Texas Instruments LMG3422R030RQZT	54-VQFN Exposed Pad	Low Side	PWM	40 A	600 V	26 mOhm	1:1	Non-Inverting	General Purpose	150 °C	-40 °C	Current Limiting (Fixed) Over Temperature UVLO	1	7.5 V	18 V	Slew Rate Controlled Status Flag	N/P-Channel	54-VQFN (12x12)	Surface Mount
Texas Instruments LMG3422R050RQZR	54-VQFN Exposed Pad	Low Side	PWM	32 A	600 V	43 mOhm	1:1	Non-Inverting	General Purpose	150 °C	-40 °C	Current Limiting (Fixed) Over Temperature UVLO	1	7.5 V	18 V	Slew Rate Controlled Status Flag	N/P-Channel	54-VQFN (12x12)	Surface Mount
Texas Instruments LMG3422R030RQZR	54-VQFN Exposed Pad	Low Side	PWM	40 A	600 V	26 mOhm	1:1	Non-Inverting	General Purpose	150 °C	-40 °C	Current Limiting (Fixed) Over Temperature UVLO	1	7.5 V	18 V	Slew Rate Controlled Status Flag	N/P-Channel	54-VQFN (12x12)	Surface Mount
Texas Instruments LMG3422R050RQZT	54-VQFN Exposed Pad	Low Side	PWM	32 A	600 V	43 mOhm	1:1	Non-Inverting	General Purpose	150 °C	-40 °C	Current Limiting (Fixed) Over Temperature UVLO	1	7.5 V	18 V	Slew Rate Controlled Status Flag	N/P-Channel	54-VQFN (12x12)	Surface Mount
Texas Instruments LMG3422EVM-041																				Board(s)	Power Management	LMG3422R050	Motor Controller/Driver

Catalog

600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting

Key Features

• Qualified for JEDEC JEP180 for hard-switching topologies600V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2.2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputLMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching convertersLMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching convertersQualified for JEDEC JEP180 for hard-switching topologies600V GaN-on-Si FET with integrated gate driverIntegrated high precision gate bias voltage200V/ns FET hold-off2.2MHz switching frequency20V/ns to 150V/ns slew rate for optimization of switching performance and EMI mitigationOperates from 7.5V to 18V supplyRobust protectionCycle-by-cycle overcurrent and latched short-circuit protection with < 100ns responseWithstands 720V surge while hard-switchingSelf-protection from internal overtemperature and UVLO monitoringAdvanced power managementDigital temperature PWM outputLMG3426R030 includes zero-voltage detection (ZVD) feature that facilitates soft-switching convertersLMG3427R030 includes zero-current detection (ZCD) feature that facilitates soft-switching converters

Description

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected . Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin. The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency. The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected . Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.