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LMG3422R050RQZR
Integrated Circuits (ICs)

LMG3422R050RQZR

Active
Texas Instruments

600-V 50-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING

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LMG3422R050RQZR
Integrated Circuits (ICs)

LMG3422R050RQZR

Active
Texas Instruments

600-V 50-MΩ GAN FET WITH INTEGRATED DRIVER, PROTECTION AND TEMPERATURE REPORTING

Technical Specifications

Parameters and characteristics for this part

SpecificationLMG3422R050RQZR
Current - Output (Max) [Max]32 A
Fault ProtectionOver Temperature, UVLO, Current Limiting (Fixed)
FeaturesSlew Rate Controlled, Status Flag
Input TypeNon-Inverting
InterfacePWM
Mounting TypeSurface Mount
Number of Outputs1
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Output ConfigurationLow Side
Output TypeN/P-Channel
Package / Case54-VQFN Exposed Pad
Ratio - Input:Output [custom]1:1
Rds On (Typ)43 mOhm
Supplier Device Package54-VQFN (12x12)
Switch TypeGeneral Purpose
Voltage - Load600 V
Voltage - Supply (Vcc/Vdd) [Max]18 V
Voltage - Supply (Vcc/Vdd) [Min]7.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 19.18
10$ 13.90
25$ 12.55
100$ 11.03
250$ 10.30
500$ 9.93
Digi-Reel® 1$ 19.18
10$ 13.90
25$ 12.55
100$ 11.03
250$ 10.30
500$ 9.93
Tape & Reel (TR) 2000$ 8.44
Texas InstrumentsLARGE T&R 1$ 11.21
100$ 9.79
250$ 7.55
1000$ 6.75

Description

General part information

LMG3422R030 Series

The LMG342xR030 GaN FET with integrated driver and protection is targeted at switch-mode power converters and enables designers to achieve new levels of power density and efficiency.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TI’s low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20V/ns to 150V/ns, which can be used to actively control EMI and optimize switching performance. The LMG3426R030 includes the zero-voltage detection (ZVD) feature which provides a pulse output from the ZVD pin when zero-voltage switching is realized.The LMG3427R030 includes the zero-current detection (ZCD) feature which provides a pulse output from the ZCD pin when a positive drain-to-source current is detected .

Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overcurrent, short-circuit, overtemperature, VDD UVLO, and high-impedance RDRV pin.