Discrete Semiconductor Products
STD120N4LF6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 3.1 MOHM, 80 A, DPAK STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET
Discrete Semiconductor Products
STD120N4LF6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 3.1 MOHM, 80 A, DPAK STRIPFET(TM) VI DEEPGATE(TM) POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STD120N4LF6 |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 80 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 110 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD120N4LF6 Series
This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Documents
Technical documentation and resources