STD120N4LF6 Series

N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

Catalog

N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

Part	Technology	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Qualification	Grade	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Package / Case	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STD120N4LF6	MOSFET (Metal Oxide)	110 W	DPAK	4300 pF	5 V 10 V	Surface Mount	4 mOhm	AEC-Q101	Automotive	3 V	40 V	N-Channel	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	175 °C	-55 °C	80 nC

Catalog

N-channel 40 V, 3.1 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET

Description

This product is a 40 V N-channel STripFET™ VI Power MOSFET based on the ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.