STP150NF04
ActiveN-CHANNEL 40 V, 0.005 OHM, 80 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE
STP150NF04
ActiveN-CHANNEL 40 V, 0.005 OHM, 80 A STRIPFET(TM) II POWER MOSFET IN TO-220 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP150NF04 |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 7 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.06 | |
| 50 | $ 1.65 | |||
| 100 | $ 1.36 | |||
| 500 | $ 1.23 | |||
Description
General part information
STP150NF04 Series
This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Documents
Technical documentation and resources