Discrete Semiconductor Products

STP150N3LLH6

Obsolete

MOSFET N-CH 30V 80A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 80A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP150N3LLH6

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC
Input Capacitance (Ciss) (Max) @ Vds	4040 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
STMicroelectronics STP150NF55	120 A	10 V	6 mOhm	TO-220-3	20 V	190 nC	300 W	MOSFET (Metal Oxide)	55 V	N-Channel	4 V	Through Hole	175 °C	-55 °C	4400 pF	TO-220
STMicroelectronics STP150N3LLH6		4.5 V 10 V	3.3 mOhm	TO-220-3	20 V	40 nC	110 W	MOSFET (Metal Oxide)	30 V	N-Channel	2.5 V	Through Hole	175 °C	-55 °C	4040 pF	TO-220
STMicroelectronics STP150NF04		10 V	7 mOhm	TO-220-3	20 V	150 nC	300 W	MOSFET (Metal Oxide)	40 V	N-Channel	4 V	Through Hole	175 °C	-55 °C	3650 pF	TO-220

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 80A (Tc) 110W (Tc) Through Hole TO-220

Technical documentation and resources