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Discrete Semiconductor Products
JAN2N5302
ActiveMicrochip Technology
60V 30A 5W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
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Search across all available documentation for this part.
Discrete Semiconductor Products
JAN2N5302
ActiveMicrochip Technology
60V 30A 5W NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N5302 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 hFE |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-3, TO-204AA |
| Power - Max [Max] | 5 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 138.71 | |
| Microchip Direct | N/A | 1 | $ 149.38 | |
| Newark | Each | 100 | $ 138.71 | |
| 500 | $ 133.38 | |||
Description
General part information
JAN2N5302-Transistor Series
This specification covers the performance requirements for NPN, silicon, high-power, 2N5302 and 2N5303 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/456. The device package for the encapsulated device types is a TO-204AA (similar to TO-3).
Documents
Technical documentation and resources
