JAN2N5302-Transistor Series

NPN Silicon High-Power 60V to 80V, 20A to 30A

Catalog

NPN Silicon High-Power 60V to 80V, 20A to 30A

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)	Grade	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Mounting Type	Package / Case
Microchip Technology JAN2N5302	3 V	30 A	NPN	15 hFE	60 V	Military	10 µA	5 W	Through Hole	TO-204AA TO-3
Microchip Technology 2N5302	3 V	30 A	NPN	15 hFE	60 V		10 µA	5 W	Through Hole	TO-204AA TO-3

Catalog

NPN Silicon High-Power 60V to 80V, 20A to 30A

Key Features

- The device package for the encapsulated device types is a TO-204AA (similar to TO-3).

Description

This specification covers the performance requirements for NPN, silicon, high-power, 2N5302 and 2N5303 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/456. The device package for the encapsulated device types is a TO-204AA (similar to TO-3).