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TO-251AA
Discrete Semiconductor Products

SIHU3N50D-E3

LTB

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DocumentsDatasheet
TO-251AA
Discrete Semiconductor Products

SIHU3N50D-E3

LTB

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIHU3N50D-E3
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds175 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Rds On (Max) @ Id, Vgs3.2 Ohm
Supplier Device PackageTO-251AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 3000$ 0.36

Description

General part information

SIHU3 Series

N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole TO-251AA

Documents

Technical documentation and resources