SIHU3 Series

Catalog

MOSFET N-CHANNEL 500V 3A IPAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHU3N50DA-GE3	12 nC	-55 °C	150 °C	3 A	10 V	N-Channel	4.5 V	177 pF	30 V	MOSFET (Metal Oxide)	Through Hole	IPAK (TO-251)	3.2 Ohm	500 V	IPAK TO-251-3 Long Leads TO-251AB
Vishay General Semiconductor - Diodes Division SIHU3N50D-E3	12 nC	-55 °C	150 °C	3 A	10 V	N-Channel	5 V	175 pF	30 V	MOSFET (Metal Oxide)	Through Hole	TO-251AA		500 V	IPAK TO-251-3 Short Leads TO-251AA	3.2 Ohm
Vishay General Semiconductor - Diodes Division SIHU3N50D-GE3	12 nC	-55 °C	150 °C	3 A	10 V	N-Channel	5 V	175 pF	30 V	MOSFET (Metal Oxide)	Through Hole	TO-251AA		500 V	IPAK TO-251-3 Short Leads TO-251AA	3.2 Ohm