SIHU3N50DA-GE3

LTB

MOSFET N-CHANNEL 500V 3A IPAK

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Discrete Semiconductor Products

LTB

MOSFET N-CHANNEL 500V 3A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHU3N50DA-GE3

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	177 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Long Leads, IPAK, TO-251AB
Rds On (Max) @ Id, Vgs [Max]	3.2 Ohm
Supplier Device Package	IPAK (TO-251)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SIHU3N50DA-GE3	12 nC	-55 °C	150 °C	3 A	10 V	N-Channel	4.5 V	177 pF	30 V	MOSFET (Metal Oxide)	Through Hole	IPAK (TO-251)	3.2 Ohm	500 V	IPAK TO-251-3 Long Leads TO-251AB
Vishay General Semiconductor - Diodes Division SIHU3N50D-E3	12 nC	-55 °C	150 °C	3 A	10 V	N-Channel	5 V	175 pF	30 V	MOSFET (Metal Oxide)	Through Hole	TO-251AA		500 V	IPAK TO-251-3 Short Leads TO-251AA	3.2 Ohm
Vishay General Semiconductor - Diodes Division SIHU3N50D-GE3	12 nC	-55 °C	150 °C	3 A	10 V	N-Channel	5 V	175 pF	30 V	MOSFET (Metal Oxide)	Through Hole	TO-251AA		500 V	IPAK TO-251-3 Short Leads TO-251AA	3.2 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 0.33

General part information

N-Channel 500 V 3A (Tc) 69W (Tc) Through Hole IPAK (TO-251)

Technical documentation and resources