Discrete Semiconductor Products

EFC6605R-V-TR

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NCH+NCH 10A 24V 2.5V DRIVE/ REEL

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Discrete Semiconductor Products

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NCH+NCH 10A 24V 2.5V DRIVE/ REEL

Technical Specifications

Parameters and characteristics for this part

Specification	EFC6605R-V-TR

Configuration	2 N-Channel
Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	2.5 V
Gate Charge (Qg) (Max) @ Vgs	19.8 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, No Lead
Power - Max [Max]	1.6 W
Rds On (Max) @ Id, Vgs	13.3 mOhm
Supplier Device Package	6-EFCP (1.9x1.46)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

Dual N-Channel Power MOSFET, 20V, 10A, 13.3mΩ

Part	Operating Temperature	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Feature	FET Feature	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor EFC6605R-V-TR	150 °C	6-EFCP (1.9x1.46)	1.6 W	10 A	19.8 nC	6-SMD No Lead	Logic Level Gate	2.5 V	Surface Mount	13.3 mOhm	MOSFET (Metal Oxide)	2 N-Channel	20 V	1.3 V
ON Semiconductor EFC6605R-TR	150 °C	6-EFCP (1.9x1.46)	1.6 W		19.8 nC	6-SMD No Lead	Logic Level Gate	2.5 V	Surface Mount		MOSFET (Metal Oxide)	2 N-Channel (Dual)

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General part information

EFC6605R is N-Channel Power MOSFET, 20V, 10A, 13.3mΩ, Dual EFCP.

Technical documentation and resources