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6-WLCSP
Discrete Semiconductor Products

EFC6605R-TR

Obsolete
ON Semiconductor

DUAL N-CHANNEL POWER MOSFET, 20V, 10A, 13.3MΩ

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DocumentsDatasheet
6-WLCSP
Discrete Semiconductor Products

EFC6605R-TR

Obsolete
ON Semiconductor

DUAL N-CHANNEL POWER MOSFET, 20V, 10A, 13.3MΩ

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationEFC6605R-TR
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
FET Feature2.5 V
Gate Charge (Qg) (Max) @ Vgs19.8 nC
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-SMD, No Lead
Power - Max [Max]1.6 W
Supplier Device Package6-EFCP (1.9x1.46)
TechnologyMOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.84
10$ 0.52
100$ 0.34
500$ 0.26
1000$ 0.23
2000$ 0.21
Tape & Reel (TR) 5000$ 0.19
10000$ 0.17
15000$ 0.17
25000$ 0.16
35000$ 0.15

Description

General part information

EFC6605R Series

EFC6605R is N-Channel Power MOSFET, 20V, 10A, 13.3mΩ, Dual EFCP.

Documents

Technical documentation and resources