EFC6605R Series

Dual N-Channel Power MOSFET, 20V, 10A, 13.3mΩ

Catalog

Dual N-Channel Power MOSFET, 20V, 10A, 13.3mΩ

Part	Operating Temperature	Supplier Device Package	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Package / Case	FET Feature	FET Feature	Mounting Type	Rds On (Max) @ Id, Vgs	Technology	Configuration	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id
ON Semiconductor EFC6605R-V-TR	150 °C	6-EFCP (1.9x1.46)	1.6 W	10 A	19.8 nC	6-SMD No Lead	Logic Level Gate	2.5 V	Surface Mount	13.3 mOhm	MOSFET (Metal Oxide)	2 N-Channel	20 V	1.3 V
ON Semiconductor EFC6605R-TR	150 °C	6-EFCP (1.9x1.46)	1.6 W		19.8 nC	6-SMD No Lead	Logic Level Gate	2.5 V	Surface Mount		MOSFET (Metal Oxide)	2 N-Channel (Dual)

Dual N-Channel Power MOSFET, 20V, 10A, 13.3mΩ

• 2.5V drive

• Protection diode in

• Common-drain type

EFC6605R is N-Channel Power MOSFET, 20V, 10A, 13.3mΩ, Dual EFCP.