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ATPAK
Discrete Semiconductor Products

NVATS5A106PLZT4G

Obsolete
ON Semiconductor

P-CHANNEL POWER MOSFET -40V, -33A, 25MΩ

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ATPAK
Discrete Semiconductor Products

NVATS5A106PLZT4G

Obsolete
ON Semiconductor

P-CHANNEL POWER MOSFET -40V, -33A, 25MΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationNVATS5A106PLZT4G
Current - Continuous Drain (Id) @ 25°C33 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs29 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1380 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)48 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackageDPAK/ATPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NVATS5A106PLZ Series

Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. ATPAK devices are Low on-resistance, High current capability and pin-compatible with DPAK(TO-252). AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.