
Discrete Semiconductor Products
NVATS5A106PLZT4G
ObsoleteON Semiconductor
P-CHANNEL POWER MOSFET -40V, -33A, 25MΩ
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Discrete Semiconductor Products
NVATS5A106PLZT4G
ObsoleteON Semiconductor
P-CHANNEL POWER MOSFET -40V, -33A, 25MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | NVATS5A106PLZT4G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 48 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 25 mOhm |
| Supplier Device Package | DPAK/ATPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVATS5A106PLZ Series
Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. ATPAK devices are Low on-resistance, High current capability and pin-compatible with DPAK(TO-252). AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources