
Discrete Semiconductor Products
NVATS5A108PLZT4G
ObsoleteON Semiconductor
P-CHANNEL POWER MOSFET, -40V, -77A, 10.4MΩ
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Discrete Semiconductor Products
NVATS5A108PLZT4G
ObsoleteON Semiconductor
P-CHANNEL POWER MOSFET, -40V, -77A, 10.4MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVATS5A108PLZT4G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 77 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 79.5 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) [Max] | 72 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 10.4 mOhm |
| Supplier Device Package | ATPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVATS5A106PLZ Series
Automotive Power MOSFET designed for compact and efficient designs and including high thermal performance. ATPAK devices are Low on-resistance, High current capability and pin-compatible with DPAK(TO-252). AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources